unisonic technologies co., ltd 2N40 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-524.b 2a, 400v n-channel power mosfet ? description the utc 2N40 is an n-channel mode power mosfet using utc? s advanced technology to provide customers with a minimum on-state resistance, stable off?st ate characteristics and superior switching performance. it also can withstand high energy pulse in the avalanche. the utc 2N40 is usually used in general purpose switching applications, motor control circuits and switched mode power supply. ? features * high switching speed * r ds(on) =3.4 ? @ v gs =10v * 100% avalanche tested ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 2N40l-ta3-t 2N40g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
2N40 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-524.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v continuous i d 2 a drain current pulsed i dm 7 a avalanche current i ar 2.5 a single pulsed avalanche energy e as 100 mj power dissipation p d 25 w linear derating factor p d /t mb 0.2 w/c junction temperature t j 150 c storage temperature t stg -55 ~ 150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 5 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 400 v breakdown voltage temperature coefficient bv dss /t j v ds =v gs , i d =250a 0.45 v/c drain-source leakage current i dss v ds =400v, v gs =0v 1 25 a forward v gs =+30v, v ds =0v +10 +200 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -10 -200 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =1.25a 3.0 3.4 ? dynamic parameters input capacitance c iss 240 pf output capacitance c oss 44 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 26 pf switching parameters total gate charge q g(tot) 20 25 nc gate to source charge q gs 2 3 nc gate to drain charge q gd v gs =10v, v ds =320v, i d =2.5a 8 12 nc turn-on delay time t d(on) 10 ns rise time t r 25 ns turn-off delay time t d(off) 46 ns fall-time t f v dd =200v, i d =2.5a, r g =24 ? , r d =78 ? 25 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 2.5 a maximum body-diode pulsed current i sm t c =25c 10 a drain-source diode forward voltage v sd i s =2.5a, v gs =0v 1.2 v body diode reverse recovery time t rr 200 ns body diode reverse recovery charge q rr i s =2.5a, v gs =0v, di/dt=100a/s 2.0 c
2N40 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-524.b ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
2N40 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-524.b ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
2N40 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-524.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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